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| Datasheet File OCR Text: |
| c-357 IRGBC30MD2 insulated gate bipolar transistor with ultrafast soft recovery diode
c-358 IRGBC30MD2 c-359 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics c-360 fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature IRGBC30MD2 c-361 IRGBC30MD2 c-362 fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current c-363 c-364 |
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